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1/12 february 2004 stp20nm50 - stp20nm50fp stb20nm50 - stb20nm50-1 n-channel 550v @ tj max -0.20 ? - 20a to-220/fp/d 2 pak/i 2 pak mdmesh? mosfet typical r ds (on) = 0.20 ? high dv/dt and avalanche capabilities 100% avalanche tested low input capacitance and gate charge low gate input resistance tight process control and high manufacturing yields description the mdmesh? is a new revolutionary mosfet tech- nology that associates the multiple drain process with the company?s powermesh? horizontal layout. the resulting product has an outstanding low on-resis- tance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company?s propri- etary strip technique yields overall dynamic perfor- mance that is significantly better than that of similar competition?s products. applications the mdmesh? family is very suitable for increasing power density of high voltage converters allowing sys- tem miniaturization and higher efficiencies. absolute maximum ratings ()pulse width limited by safe operating area (1) i sd 20a, di/dt 400a/s, v dd v (br)dss ,t j t jmax. (*)limited only by maximum temperature allowed type v dss ( @ tjmax) r ds(on) i d stp20nm50/fp stb20nm50 stb20nm50-1 550v 550v 550v <0.25 ? <0.25 ? <0.25 ? 20 a 20 a 20 a symbol parameter value unit stp(b)20nm50(-1) stp20nm50fp v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25c 20 20(*) a i d drain current (continuous) at t c = 100c 12.6 12.6(*) a i dm ( ) drain current (pulsed) 80 80(*) a p tot total dissipation at t c = 25c 192 45 w derating factor 1.2 0.36 w/c dv/dt(1) peak diode recovery voltage slope 15 v/ns v iso insulation winthstand voltage (dc) -- 2000 v t stg storage temperature ?65 to 150 c t j max. operating junction temperature 150 c to-220 1 2 3 to-220fp 1 2 3 i2pak (tabless to-220) 1 3 d 2 pak i nternal schematic diagram
stp20nm50/fp/stb20nm50/stb20nm50-1 2/12 thermal data avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) off on (1) dynamic 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . to-220/i2pak/ d2pak to-220fp rthj-case thermal resistance junction-case max 0.65 2.8 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j =25 c, i d =5a,v dd =50v) 650 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 500 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating 1a v ds = max rating, t c =125 c 10 a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d =250a 345v r ds(on) static drain-source on resistance v gs = 10v, i d = 10a 0.20 0.25 ? symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 10a 10 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 1480 pf c oss output capacitance 285 pf c rss reverse transfer capacitance 34 pf c oss eq. (2) equivalent output capacitance v gs =0v,v ds = 0v to 400v 130 pf r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20mv open drain 1.6 ?
3/12 stp20nm50/fp/stb20nm50/stb20nm50-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =250v,i d =10a r g =4.7 ? v gs =10v (see test circuit, figure 3) 24 ns t r rise time 16 ns q g total gate charge v dd =400v,i d =20a, v gs =10v 40 56 nc q gs gate-source charge 13 nc q gd gate-drain charge 19 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd =400v,i d =20a, r g =4.7 ?, v gs =10v (see test circuit, figure 5) 9ns t f fall time 8.5 ns t c cross-over time 23 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 20 a i sdm (2) source-drain current (pulsed) 80 a v sd (1) forwardonvoltage i sd =20a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20a,di/dt=100a/s, v dd =100v,t j =25 c (see test circuit, figure 5) 350 4.6 26 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20a,di/dt=100a/s, v dd =100v,t j =150 c (see test circuit, figure 5) 435 5.9 27 ns c a safe operating area for to-220fp safe operating area for to-220 / i2pak / d2pak
stp20nm50/fp/stb20nm50/stb20nm50-1 4/12 static drain-source on resistance transconductance transfer characteristics output characteristics thermal impedance for to-220 / i2pak / d2pak thermal impedance for to-220fp
5/12 stp20nm50/fp/stb20nm50/stb20nm50-1 gate charge vs gate-source voltage capacitance variations source-drain diode forward characteristics normalized on resistance vs temperature normalized gate thereshold voltage vs temp.
stp20nm50/fp/stb20nm50/stb20nm50-1 6/12 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load
7/12 stp20nm50/fp/stb20nm50/stb20nm50-1 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
stp20nm50/fp/stb20nm50/stb20nm50-1 8/12 1 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 o 8 o d 2 pak mechanical data 3
9/12 stp20nm50/fp/stb20nm50/stb20nm50-1 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stp20nm50/fp/stb20nm50/stb20nm50-1 10/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
11/12 stp20nm50/fp/stb20nm50/stb20nm50-1 tape and reel shipment (suffix ? t4 ? )* tube shipment (no suffix)* d 2 pak footprint * on sales type dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0.075 0.082 r 50 1.574 t 0.25 0.35 0.0098 0.0137 w 23.7 24.3 0.933 0.956 tape mechanical data
stp20nm50/fp/stb20nm50/stb20nm50-1 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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